Paper Asia | 2026
Authors: Naif Y.H.; Kabbani A.; Khan M.A.R.; Abdulbaqi A.G.
DOI: 10.59953/paperasia.v42i2b.1117
Journal: Paper Asia
Year: 2026
Publisher: IPMEDIA SDN BHD
Document Type: Article
Open Access: All Open Access; Gold Open Access
Cited by: 0
This paper presents the effect of channel length and width on the electrical characteristics. I-V characteristic for frequency-dependent behavior on double-gate Multi-Gate Field Effect Transistor (MuGFET) technology, multi-gate Field Effect Transistors (FETs) made of Gallium Arsenide (GaAs). Finally, using MUGFET characterization simulations, this research analyzes the effect of channel variant (5–20 nm) and long range (10–40 nm) on a number of important parameters, such as threshold voltage, drain-induced barrier lowering, subthreshold swing, and ON to OFF current ratio. Although it implies possibility of superior performance of the device, such as reduced power consumption and leakage issue for devices trivial below 10 nm technology, it fails in suggesting ideal channel dimensions for better device performing; thus the transistors typically used has long been ≈ 30 to 40 nm fixed channel length with ≈ 5 to 10 nm fixed channel width, while also demonstrated the benefits of Fin-shaped Field Effect Transistor (FinFET) structure over traditional MOSFET for short channel effects in semiconductor manufacturing, which motivates for further exploration toward gate-all-around architecture for higher drive current and lower leakage. © 2026, IPMEDIA SDN BHD. All rights reserved.
DIBL; FinFET; GaAs; Transistor